Get a Quick Quote for Part Number 9966-CCXC with NSN 5962-01-331-6044 by Bae Systems Operations Limited Dba Bae Systems Plc

Part Number: 9966-CCXC

Alternate P/N : 9966CCXC

Item Name : Microcircuit Memory

CAGE: K0656


Good news! The part number 9966-CCXC is available with us in our ready-to-ship inventory. This part is a Microcircuit Memory, manufactured by Bae Systems Operations Limited Dba Bae Systems Plc (CAGE Code K0656) having NSN 5962013316044 and FSC 5962 Microcircuits Electronic. If you want to purchase 9966-CCXC part, we can provide a quick quote for this part number after you fill out the RFQ form on this page.

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NSN Information for Part Number 9966-CCXC with NSN 5962-01-331-6044, 5962013316044

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-331-6044

Item Description:

Microcircuit Memory

59620133160440NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberiscrnvcrnccHCCMSDSSADC
9966-Ccxc525

Characteristics Data of NSN 5962-01-331-6044, 5962013316044

MRCCriteriaCharacteristic
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS
MEMORYCRHLBIT QUANTITY256
MEMORYCSWJWORD QUANTITY32
MEMORYTTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYABKWOVERALL HEIGHT0 400 INCHES MAXIMUM
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN6 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYADAQBODY LENGTH0 840 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDBIPOLAR AND SCHOTTKY AND PROGRAMMED AND MONOLITHIC AND 3-STATE OUTPUT AND SUEDE FINISH
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCZEQTIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEROM

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